| TGS单晶的内偏置电场 |
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| 引用本文： | 朱中权,陆惠秀.TGS单晶的内偏置电场[J].物理学报,1980,29(3):400-405. |
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| 作者姓名： | 朱中权 陆惠秀 |
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| 作者单位： | 中国科学院上海技术物理研究所 |
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| 摘 要： | 本文从实验上验证了用热力学方法处理TGS晶体内偏置电场的正确性。分析了纯TGS晶体辐照改性与LATGS晶体的Eb-T关系有所区别的原因。文中还讨论了辐照改性的退化问题。
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| 收稿时间： | 4/9/1979 12:00:00 AM |
THE INTERNAL BIAS FIELD OF TGS SINGLE CRYSTAL |
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| ZHU ZHONG-QUAN and LU HUI-XIU.THE INTERNAL BIAS FIELD OF TGS SINGLE CRYSTAL[J].Acta Physica Sinica,1980,29(3):400-405. |
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| Authors: | ZHU ZHONG-QUAN and LU HUI-XIU |
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| Abstract: | The correctness of the thermodynamic treatment of the internal bias field of the TGS crystal is demonstrated experimentally. The causes of the difference between the Eb-T relations of irradiated pure TGS and LATGS crystals are analyzed. The annealing effects on the improved properties of irradiated TGS crystals are also discussed. |
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