Effect of laser fluence on c‐axis orientation of LiNbO3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition

Completely c‐axis oriented LiNbO₃ piezoelectric films have been deposited on nanocrystalline diamond (NCD)/Si substrates with SiO₂ buffer layer by pulsed laser deposition. The amorphous SiO₂ buffer layer was formed on NCD/Si substrates by sol‐gel method. The c‐axis orientation and crystallinity of LiNbO₃ films are strongly dependent on the laser fluence, and the laser fluence 3.6 J/cm² is found to be the optimal value for the growth of oriented LiNbO₃ film, which has a smooth surface with composed of a large mount of uniform grains. The average surface roughness of LiNbO₃ films is about 6.7 nm.