Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ
− SR method |
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| Authors: | T N Mamedov V N Duginov A V Stoykov I L Chaplygin D Herlach U Zimmermann V N Gorelkin J Major M Schefzik |
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| Institution: | (1) Joint Institute of Nuclear Research, 141980 Dubna, Moscow Region, Russia;(2) Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland;(3) Moscow Physicotechnical Institute, 141700 Dolgoprudnyi, Moscow Region, Russia;(4) Max-Planck-Institut für Metallforschung, D-70569 Stuttgart, Germany |
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| Abstract: | The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×1013 cm−3) and antimony (Sb: 2×1018 cm−3) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the
muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample
with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the
acceptor center
μ
A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis
of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination
of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998) |
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