Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories |
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| Authors: | BI Seo UA Shaislamov S-W Kim H-K Kim B Yang SK Hong |
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| Institution: | aKumoh National Institute of Technology, Department of Advanced Nano Materials for Information Technology, 1 Yangho-dong, Gumi-si, Gyeongbuk 730-701, Korea;bHynix Semiconductor Inc., Memory R&D Division, New Device Team, Icheon-si, Kyoungki-Do 467-701, Korea |
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| Abstract: | We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques. |
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| Keywords: | Anodization Ferroelectric Nanotube Porous alumina BLT |
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