光电耦合器件闪烁噪声模型

对电应力前后光电耦合器件的闪烁噪声（1/f噪声）进行了实验和理论研究.实验发现，应力前后1/f噪声幅值随偏置电流均有相同的变化规律：在低电流区，1/f噪声幅值与偏置电流成正比，在高电流区，1/f噪声幅值与偏置电流的平方成正比，且应力后1/f噪声幅值增大了约7倍.理论分析表明，小电流时该器件的1/f噪声为扩散1/f噪声，大电流时为复合1/f噪声，应力在器件有源区诱生的陷阱是1/f噪声增大的根本原因.基于载流子数涨落和迁移率涨落机制，建立了一个光电耦合器件1/f噪声的定量分析模型，实验结果和模型符合良好.

A Model for 1/f Noise in Optoelectronic Coupled Devices

Flicker noise(1/f noise) in Optoelectronic Coupled Devices(OCDs) is studied over a wide range of bias currents with special emphasis on the influence of electrical stress.Experimental results demonstrate that there is a similar rule for OCDs before and after stressed,and the magnitude of 1/f noise is proportional to the bias current in the range of low currents and proportional to the power of the bias current in the rang of high currents.Comparing to virgin device,the magnitude of 1/f noise in the stressed device increases about 7 times.It is discussed that 1/f noise belongs to diffusion 1/f noise in the rang of low currents,while,at high currents,it belongs to recombination 1/f noise,and the increasing magnitude of 1/f noise is due to new traps induced by electrical stress.Based on the mechanisms of carrier numbers fluctuations and carrier relocity fluctuations,a 1/f noise model in OCDs is developed.Experimental results agree well with the developed model.