50 dB parametric on-chip gain in silicon photonic wires |
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Authors: | Kuyken Bart Liu Xiaoping Roelkens Günther Baets Roel Osgood Richard M Green William M J |
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Institution: | Department of Information Technology, Ghent University-imec, Ghent, Belgium. |
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Abstract: | A pulsed mid-infrared pump at λ=2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2 cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (β2) and positive fourth-order (β4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm-2486 nm. Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification >40 dB with an on-chip gain bandwidth wider than 580 nm, as well as narrowband Raman-assisted peak gain >50 dB. |
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