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Anticolliding design for monolithic passively mode-locked semiconductor lasers
Authors:Javaloyes J  Balle S
Affiliation:Departament de Fisica, Universitat de les Illes Baleares, Palma, Spain. julien.javaloyes@uib.es
Abstract:The performance of two-section, passively mode-locked semiconductor lasers is theoretically analyzed for different cavity designs. Placing the saturable absorber section close to an antireflection-coated facet leads to a substantial increase in output power and a reduction in amplitude and timing jitter. Moreover, it broadens the bias current region of stable passive mode-locking operation.
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