| GaN薄膜的微区Raman散射光谱 |
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| 引用本文： | 童玉珍,张国义,MingS Liu,L A Bursill.GaN薄膜的微区Raman散射光谱[J].半导体学报,2000,21(6):554-558. |
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| 作者姓名： | 童玉珍 张国义 MingS Liu L A Bursill |
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| 作者单位： | 北京大学物理系介观物理重点实验室!北京100871，中国，北京大学物理系介观物理重点实验室!北京100871，中国，SchoolofPhysics!UniversityofMelbourne，Packville，Vic.，3052Australia，SchoolofPhysics!UniversityofMelbourne，Packville，Vic.，3052Australia |
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| 基金项目： | 国家高技术研究发展计划(863计划);; |
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| 摘 要： | 报道了低压 MOCVD生长的同一 Ga N薄膜不同位置的微区 Raman散射光谱 .观测到了微区结构不完整对 Raman谱的影响 .通过 X射线衍射分析 ,证实了该样品晶体质量是不均匀的 ,而且微结构缺陷的存在是导致回摆曲线展宽的主要原因 .结合 Hall测量结果 ,对 Ga N薄膜的 Al( L O)模式的移动进行了电声子相互作用分析 ,认为 A1 ( LO)模式的移动可能与电声子相互作用无关 ,而是受内部应力分布不均匀的影响所致 .
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| 关 键 词： | GaN 微区Raman散射 X-射线衍射 |
| 文章编号： | 0253-4177(2000)06-0554-05 |
| 修稿时间： | 1999-04-02 |
Micro-Raman-Scattering Spectra of GaN Films |
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| TONG Yu\|zhen and ZHANG Guo\|yi.Micro-Raman-Scattering Spectra of GaN Films[J].Chinese Journal of Semiconductors,2000,21(6):554-558. |
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| Authors: | TONG Yu\|zhen and ZHANG Guo\|yi |
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| Institution: | TONG Yu-zhen
,ZHANG Guo-yi
(Mesoscopic Physics Laboratory,Department of Physics,Peking University,Beijing 100871, China)Ming S. Liu
,Lesile A. Bursill
(School of Physics, University of Melbourne, Packville , Vic., 3052 Australia) |
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| Abstract: | The micro\|Raman\|scattering spectra are reported,which are at different points with different qualities of the GaN films grown on Al 2O 3 substrate by low pressure MOCVD.The dependence of microstructure in the GaN film on the Raman scattering spectra is observed.It is confirmed that microstructure defects exist in the GaN film through X\|ray diffraction analysis.Furthermore,according to the LO phonon\|plasmon coupled theory and the results of Hall measurement,it is suggested that the slight shifting of A1(LO) mode come from the imhomogeneity of strain,instead of the LO phonon\|plasmon interaction. |
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| Keywords: | GaN micro\|Raman scattering X-ray diffraction |
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