Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer |
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| Authors: | Jun Li Fan Zhou Hua-Ping Lin Wen-Qing Zhu Jian-Hua Zhang Xue-Yin Jiang Zhi-Lin Zhang |
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| Institution: | 1. Department of Materials Science, Shanghai University, Jiading, Shanghai 201800, People’s Republic of China;2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People’s Republic of China;1. Instituto de Física, Universidade Federal de Uberlândia, UFU, CEP:38700-128, Patos de Minas, MG, Brazil;2. Departamento de Física, ICEx, Universidade Federal de Minas Gerais, CEP:31270-901, Belo Horizonte, MG, Brazil;1. Department of Applied Physics, Tunghai University, Taichung 407, Taiwan;2. Department of Electrical Engineering, Hsiuping University of Science and Technology, Taichung 412, Taiwan;3. iSentek Ltd., Advanced Sensor Laboratory, Taipei 221, Taiwan;4. Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan;5. Institute of Physics, Academia Sinica, Taipei 115, Taiwan;1. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 8th St, Troy, NY 12180, USA;2. Department of Electrical & Computer Systems Engineering, Rensselaer Polytechnic Institute, 110 8th St, Troy, NY 12180, USA;3. Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba 300-2611, Japan;1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;2. Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749, Republic of Korea;3. Smart I/O Control Device Research Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700, Republic of Korea;4. Department of Chemical Engineering, Sungkyunkwan University, Gyeonggi-do, 440-746, Republic of Korea;5. Department of Energy Engineering, Hanyang University, Seoul, 133-791, Republic of Korea;6. School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749, Republic of Korea |
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| Abstract: | A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium–gallium–zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p–n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (VGS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p–n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT. |
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