Ultra-low dark count InGaAs/InP single photon avalanche diode |
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| Authors: | LI Bin NIU Yuxiu FENG Yinde CHEN Xiaomei |
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| Affiliation: | Accelink Technologies Co., Ltd., Wuhan 430000, China,Accelink Technologies Co., Ltd., Wuhan 430000, China,Accelink Technologies Co., Ltd., Wuhan 430000, China and Accelink Technologies Co., Ltd., Wuhan 430000, China |
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| Abstract: | A low noise InGaAs/InP single photon avalanche diode (SPAD) is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 320 Hz dark count rate (DCR) with a low after pulsing probability of 0.57% at 233 K. |
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