Ti-incorporated ZnO films synthesized via magnetron sputtering and its optical properties |
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| Authors: | Haixia Chen Wenge Guo Jijun Ding Shuyi Ma |
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| Affiliation: | 1. School of E. E. & C. Engineering, The University of Western Australia, Perth, WA 6009, Australia;2. Dept. of Physics, Brown University, Providence, RI 02912, USA;3. School of Engineering, Brown University, Providence, RI 02912, USA |
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| Abstract: | Undoped and Ti-doped ZnO films were deposited using radio frequency reactive magnetron sputtering at various sputtering powers. The crystal structures, surface morphology, chemical state and optical properties in Ti-doped ZnO films were systematically investigated via X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and ultraviolet visible (UV–Vis) spectrophotometer. Results indicated that titanium atoms may replace zinc atomic sites substitutionally or incorporate interstitially in the hexagonal lattices, and a moderate quantity of Ti atoms exist in the form of sharing the oxygen with Zn atoms and hence improve the (0 0 2) orientation. The photoluminescence (PL) spectra of the Ti-doped ZnO films contain one main blue peak, whose intensity increased with the increase of sputtering power. Our results indicated that a higher compressive stress in Ti-doped ZnO films results in a lower optical band gap and a lower transmittance, and various Ti impurities can affect the concentration of the interstitial Zn and O vacancies. |
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