Sensitivity of Semiconductor Gas Sensors to Hydrogen and Oxygen in an Inert Gas Atmosphere |
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| Authors: | V. V. Malyshev A. V. Pislyakov I. F. Krestnikov V. A. Krutov S. N. Zaitsev |
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| Affiliation: | (1) Kurchatov Institute Russian Research Center, Institute of Molecular Physics, pl. Kurchatova 1, Moscow, 123182, Russia;(2) Fedorov Institute of Applied Geophysics, ul. Rostokinskaya 9, Moscow, 129226, Russia |
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| Abstract: | Semiconductor gas sensors with nine types of gas-sensing films were prepared and their sensitivity for hydrogen and oxygen in binary and ternary gas mixtures containing nitrogen in concentrations of 0–4 and 0–8 vol %, respectively was studied. The sensor temperature was varied from 200 to 500°C. Sensors based on an In2O3+ Al2O3(30 : 70) composite with platinum contact areas exhibited the best metrological and performance characteristics. The resistance of sensors heated to an optimum temperature of 400°C was measured as a function of the test gas concentration. In principle, the concentrations of the components in nitrogen can be determined to within 5 rel % with the use of the above functions. |
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