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Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering
Authors:K. Mokeddem   M. Aoucher  T. Smail  
Affiliation:aEquipe des Couches Minces et Semiconducteurs, Laboratoire de Physique des Matériaux, Faculté de Physique, USTHB, BP 32 El Alia, 16111 Bab-Ezzouar, Alger, Algeria;bFaculté des Sciences, Département de Physique, Université Mohamed Bouguerra, Avenue de l’Indépendance, 35000 Boumerdès, Algeria
Abstract:Hydrogenated amorphous silicon nitride thin films are deposited by DC magnetron sputtering in argon, and molecular hydrogen and nitrogen mixture. The samples are characterized by electrical measurements and by optical transmission. The physicochemical structure is studied by FTIR spectrum analysis. The results show that both nitrogen and hydrogen are incorporated. The ratio [N]/[Si] increases with increasing hydrogen partial pressure. The deposited films are used in MIS structures. The capacitance–voltage characteristics are carried out. The deposited samples present a large gap and show a nearly chemical stoichiometric composition.
Keywords:a-SiN:H films   Sputtering   FTIR measurements   MIS structure
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