Quantitative characterization of chaotic instabilities in semiconductors |
| |
Authors: | J. Požela A. Namajūnas A. Tamaševičius J. Ulbikas |
| |
Affiliation: | (1) Institute of Semiconductor Physics, Academy of Sciences, Lithuanian SSR, 52 K. Po elos, SU-232600 Vilnius, USSR |
| |
Abstract: | A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk*, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAs Cr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk* range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed. |
| |
Keywords: | 72.20 72.70 06 |
本文献已被 SpringerLink 等数据库收录! |
|