Silylated gallium and indium chalcogenide ring systems as potential precursors to ME (E=O, S) materials |
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| Authors: | Iliana E Medina-Ramírez Cynthia Floyd Joel T Mague Mark J Fink |
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| Institution: | 1255. Department of Chemistry, Tulane University, 6823 Saint Charles Avenue, New Orleans, LA, 70118, USA
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| Abstract: | The reaction of R3M (M=Ga, In) with HESiR′3 (E=O, S; R′3=Ph3, iPr3, Et3, tBuMe2) leads to the formation of (Me2GaOSiPh3)2 (1); (Me2GaOSitBuMe2)2 (2); (Me2GaOSiEt3)2 (3); (Me2InOSiPh3)2 (4); (Me2InOSitBuMe2)2 (5); (Me2InOSiEt3)2 (6); (Me2GaSSiPh3)2 (7); (Et2GaSSiPh3)2 (8); (Me2GaSSiiPr3)2 (9); (Et2GaSSiiPr3)2 (10); (Me2InSSiPh3)3 (11); (Me2InSSiiPr3)n (12), in high yields at room temperature. The compounds have been characterized by multinuclear NMR and in most cases by X-ray crystallography. The molecular structures of (1), (4), (7) and (8) have been determined. Compounds (3), (6) and (10) are liquids at room temperature. In the solid state, (1), (4), (7) and (9) are dimers with central core of the dimer being composed of a M2E2 four-membered ring. VT-NMR studies of (7) show facile redistribution between four- and six-membered rings in solution. The thermal decomposition of (1)–(12) was examined by TGA and range from 200 to 350°C. Bulk pyrolysis of (1) and (2) led to the formation of Ga2O3; (4) and (5) In metal; (7)–(10) GaS and (11)–(12) InS powders, respectively.  | |
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