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High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification
Authors:Cao Jin  Hong Fei  Xing Fei-Fei  Gu Wen  Guo Xin-An  Zhang Hao  Wei Bin  Zhang Jian-Hua  Wang Jun
Affiliation:Key Laboratory of Advanced Display and System Application (Shanghai University) and Special Display Technology (Hefei University of Technology), Ministry of Education, Shanghai 200072, China; Chemistry Department, College of Sciences, Shanghai University, Shanghai 200444, China
Abstract:This paper presents two n-channel organic heterojunctiontransistors with modified insulator by usinghexadecafluorophthalocyaninatocopper (F16CuPc)/copperphthalocyanine (CuPc) and F16CuPc/pentacene as the activelayers. Compared with a single-layer device, it reports that animproved field-effect mobility and a 6-fold higher drain current areobserved. The highest mobility of 0.081~cm2/(V.s) wasobtained from F16CuPc/CuPc heterojunction devices. This resultis attributed to the dual effects of the organic heterojunction andinterface modification. Furthermore, for two heterojunction devices,the performance of the F16CuPc/CuPc-based transistor is better thanthat of F16CuPc/pentacene. This is attributed to themorphologic match of two organic components.
Keywords:n-channel   heterojunction effect   surface modification
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