Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions |
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| Authors: | D.Y. Chen X. Wang D.Y. Wei T. Wang J. Xu Z.Y. Ma W. Li K.J. Chen W.H. Shi Q.M. Wang |
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| Affiliation: | aNational Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;bDepartment of Physics, Nanjing University, Nanjing 210093, China;cState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/ SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p–i–n structures containing nano-crystalline Si/ SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p+-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron–hole pairs in the luminescent nanocrystalline Si/ SiO2 system. |
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| Keywords: | PECVD Electroluminescence p-i-n structures |
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