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Effect of bismuth on the electrical properties of Pb0.8Sn0.2Te thin films |
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| Authors: | C Jagadish A L Dawar S Nigli G K Chadha |
| Institution: | (1) Department of Physics and Astrophysics, University of Delhi, India;(2) Present address: Department of Physics & Electronics, Sri Venkateswara College, University of Delhi, Dhaula Kuan, 110021 New Delhi, India;(3) Present address: Defence Science Center, Metcalfe House, 110054 Delhi, India |
| Abstract: | D.C. conductivity and Hall coefficient studies were made on bismuth doped Pb0.8Sn0.2Te thin films in the temperature range 77–300 K. Hall coefficient and Hall mobility are found to decrease with the increase in doping density of bismuth. Films doped with even 0.3 at.% Bi changed fromp-type ton-type due to the donor action of bismuth in these films. Analysis of mobility-temperature data revealed that the lattice and defect scattering mechanisms are predominant in these films. Defect limited mobility is calculated for all the films and it is found to decrease with increase in doping concentration of bismuth suggesting the increase in defect density. |
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