Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer |
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| Institution: | 1. Biomedical and Nanoengineering Research Laboratory, Hongik University, Seoul 121-791, Korea;2. Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Korea;3. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea;4. Department of Mechanical & System Design Engineering, Hongik University, Seoul 121-791, Korea;1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Pakistan;2. Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Pakistan;3. Department of Mathematics, COMSATS Institute of Information Technology, Wah Cantt 47040, Pakistan;1. Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan;2. Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan |
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| Abstract: | The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport. |
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| Keywords: | Impedance spectroscopy 2DEG Interface Oxygen vacancies |
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