选择性埋氧层上硅器件的单粒子瞬态响应的温度相关性

本文建立了90 nm工艺下的绝缘体上硅浮体器件和选择性埋氧层上硅器件模型,通过器件电路混合仿真探究了工作温度对上述两种结构的多级反相器链单粒子瞬态脉冲宽度以及器件内部电荷收集过程的影响.研究表明, N型选择性埋氧层上硅器件相较于浮体器件具有更好的抗单粒子能力,但P型选择性埋氧层上硅器件的抗单粒子能力在高线性能量转移值下与浮体器件基本相同.同时电荷收集的温度相关性分析表明,N型选择性埋氧层上硅器件只存在漂移扩散过程,当温度升高时其电荷收集量变化很小,而N型浮体器件存在双极放大过程,电荷收集量随着温度的升高而显著增加;另外, P型选择性埋氧层上硅器件和浮体器件均存在双极放大过程,当温度升高时P型选择性埋氧层上硅器件衬底中的双极放大过程越来越严重,由于局部埋氧层的存在,反而抑制了其源极的双极放大过程,导致它的电荷收集量要明显少于P型浮体器件.因此选择性埋氧层上硅器件比浮体器件更好地抑制了温度对单粒子瞬态脉冲的影响.

Temperature dependence of single-event transient response in devices with selective-buried-oxide structure

The silicon-on-insulator (SOI) device has been found to possess low leakage current and high operation speed due to reduced internal capacitances. The sensitive volume for charge collection in SOI device is smaller than that in bulk-silicon device, which improves the ability of SOI devices to resist single-event effect (SEE). In spite of these benefits, the SOI device has certain undesirable effects such as the kink effect. To mitigate the kink effect, selective-buried-oxide (SELBOX) SOI structure has been introduced. Space-borne electronic circuits based on SOI technology recently have been used in high radiation and extreme temperature environments. However, temperature affects internal carrier transport process and impact ionization process, which makes single-event transient (SET) pulse widths increased. Most of previous researches regarding temperature dependence of SEE were for SOI floating-body devices. But the influence of operating temperature on SEE of SELBOX SOI devices are yet unclear. In this paper, an SOI floating-body device and a SELBOX SOI device under 90 nm process are established by three-dimensional device simulation, and then temperature dependence of SET response in partially depleted SOI inverter chains is studied by a mixed-mode approach over a temperature range from 200 K to 450 K. Simulation results show that the N-type SELBOX SOI device has a better ability to resist SEE than the floating-body device, while the P-type SELBOX SOI device has the same ability to resist SEE at high linear energy transfer value as the floating-body device. And temperature dependence analysis of charge collection indicates that there is only drift-diffusion process in the N-type SELBOX SOI device. The amount of charge collection in the N-type SELBOX SOI device almost does not change with the increase of temperature. In addition, both the P-type SELBOX SOI device and the P-type floating-body device have a bipolar amplification process. With the increase of temperature, the bipolar amplification process in the substrate turns more serious. However, it suppresses the bipolar amplification process of the source because of SELBOX structure, so that the amount of charge collection is reduced in the drain significantly. According to our simulation results, compared with the floating-body device, the SELBOX SOI device can very well suppress the influence of temperature on SET pulse.