二维半导体过渡金属硫化物的逻辑集成器件

微电子器件沿摩尔定律持续发展超过50年,正面临着高功耗等挑战.二维层状材料可以将载流子限制在界面1 nm的空间内,部分材料展现出高迁移率、能带可调、拓扑奇异性等特点,有望给"后摩尔时代"微电子器件带来新的技术变革.其中,以MoS_2为代表的过渡金属硫化物具有1-2 eV的带隙、良好的空气稳定性和工艺兼容性,在逻辑集成方面有巨大潜力.本文综述了二维过渡金属硫化物在逻辑器件领域的研究进展,重点讨论电子输运机理、迁移率、接触电阻等关键问题及集成技术的现状,并为今后的发展指出了方向.

Logical integration device for two-dimensional semiconductor transition metal sulfide

The semiconductor industry has experienced exponential growth for more than 50 years, following the Moore's Law. However, traditional microelectronic devices are currently facing challenges such as high energy consumption and the short-channel effect. As an alternative, two-dimensional layered materials show the ability to restrain the carriers in a 1 nm physical limit, and demonstrate high electron mobility, mutable bandgap, and topological singularity, which will hopefully give birth to revolutionary changes in electronics. The transition metal dichalcogenide (TMDC) is regarded as a prospective candidate, since it has a large bandgap (typically about 1-2 eV for a monolayer) and excellent manufacture compatibility. Here in this paper, we review the most recent progress of two-dimensional TMDC and achievements in logic integration, especially focusing on the following key aspects:charge transport, carrier mobility, contact resistance and integration. We also point out the emerging directions for further research and development.