具有poly-Si$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Ge$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;栅的应变SiGep型金属氧化物半导体场效应晶体管阈值电压漂移模型研究

针对具有poly-Si_1-xGe_x栅的应变SiGe p型金属氧化物半导体场效应晶体管(PMOSFET), 研究了其垂直电势与电场分布, 建立了考虑栅耗尽的poly-Si_1-xGe_x栅情况下该器件的等效栅氧化层厚度模型, 并利用该模型分析了poly-Si_1-xGe_x栅及应变SiGe层中Ge组分对等效氧化层厚度的影响. 研究了应变SiGe PMOSFET热载流子产生的机理及其对器件性能的影响, 以及引起应变SiGe PMOSFET阈值电压漂移的机理, 并建立了该器件阈值电压漂移模型, 揭示了器件阈值电压漂移随电应力施加时间、栅极电压、poly-Si_1-xGe_x栅及应变SiGe层中Ge组分的变化关系. 并在此基础上进行了实验验证, 在电应力施加10000 s时, 阈值电压漂移0.032 V, 与模拟结果基本一致, 为应变SiGe PMOSFET及相关电路的设计与制造提供了重要的理论与实践基础. 关键词： 应变SiGep型金属氧化物半导体场效应晶体管 1-xGe_x栅')" href="#">poly-Si_1-xGe_x栅 热载流子 阈值电压

Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage

In this work, the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) with poly-Si_1-xGe_x gate has been studied. Based on the analysis of vertical electric field and potential distribution, the equipment oxide thickness of strained SiGe PMOSFET with poly Si_1-xGe_x gate is established. The mechanism and the influence of hot carriers induced are studied. A model of the drift of threshold voltage is established; its relationships with the duration of the applied electrical stress, the voltage of gate, the Ge content of the poly Si_1-xGe_x gate and the strained SiGe are also obtained. Based on the above results, the simulation results have been compared with the experimental data. The drift of threshold voltage is 0.032 V under 10000 s electrical stress. A good agreement is observed, which indicates the validation of our proposed model.
Keywords： strained SiGe p-channel metal-oxide-semiconductor field-effect transistor 1-xGe_x gate')" href="#">poly-Si_1-xGe_x gate hot carrier threshold voltage