Benzodithiophene Copolymer—A Low‐Temperature,Solution‐Processed High‐Performance Semiconductor for Thin‐Film Transistors |
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| Authors: | H Pan Y Wu Y Li P Liu B?S Ong S Zhu G Xu |
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| Institution: | 1. Department of Materials Science & Engineering, McMaster University, Ontario, L8S 4L7 (Canada);2. Materials Design & Integration Laboratory, Xerox Research Centre of Canada, Ontario, L5K 2L1 (Canada);3. Department of Chemical Engineering, McMaster University, Ontario, L8S 4L7 (Canada) |
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| Abstract: | Poly(4,8‐didodecyl‐2,6‐bis‐(3‐methylthiophen‐2‐yl)‐benzo1,2‐b:4,5‐b′]dithiophene) self‐assembled on appropriate substrates from solution and formed highly structured thin films at low temperatures. As an as‐prepared thin‐film semiconductor without thermal annealing, it exhibited excellent field‐effect transistor properties with mobility of ～ 0.15 cm2 V–1 s–1 in thin‐film transistors. |
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| Keywords: | Field‐effect mobilities Polythiophenes Semiconductors Transistors |
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