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非晶硅锗电池性能的调控研究
引用本文:刘伯飞,白立沙,魏长春,孙建,侯国付,赵颖,张晓丹. 非晶硅锗电池性能的调控研究[J]. 物理学报, 2013, 62(20): 208801-208801. DOI: 10.7498/aps.62.208801
作者姓名:刘伯飞  白立沙  魏长春  孙建  侯国付  赵颖  张晓丹
作者单位:南开大学光电子薄膜器件与技术研究所, 光电子薄膜器件与技术天津市重点实验室, 光电信息技术科学教育部重点实验室, 天津 300071
摘    要:采用射频等离子体增强化学气相沉积技术, 研究了非晶硅锗薄膜太阳电池. 针对非晶硅锗薄膜材料的本身特性, 通过调控硅锗合金中硅锗的比例, 实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制. 借助于本征层硅锗材料帯隙梯度的设计, 获得了可有效用于多结叠层电池中的非晶硅锗电池.关键词:非晶硅锗薄膜太阳电池短路电流密度开路电压带隙梯度

关 键 词:非晶硅锗薄膜太阳电池  短路电流密度  开路电压  带隙梯度
收稿时间:2013-06-13

Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell
Liu Bo-Fei,Bai Li-Sha,Wei Chang-Chun,Sun Jian,Hou Guo-Fu,Zhao Ying,Zhang Xiao-Dan. Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell[J]. Acta Physica Sinica, 2013, 62(20): 208801-208801. DOI: 10.7498/aps.62.208801
Authors:Liu Bo-Fei  Bai Li-Sha  Wei Chang-Chun  Sun Jian  Hou Guo-Fu  Zhao Ying  Zhang Xiao-Dan
Abstract:In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium material, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.
Keywords:hydrogenated amorphous silicon germanium solar cellshort circuit current densityopen circuit voltageband gap profiling
Keywords:hydrogenated amorphous silicon germanium solar cell  short circuit current density  open circuit voltage  band gap profiling
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