Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures |
| |
Authors: | C-H Chen UM Gösele TY Tan |
| |
Institution: | (1) Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300, USA, US |
| |
Abstract: | x Si1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines
the ionized boron solubilities in GexSi1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I+ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction.
Received: 20 August 1998/Accepted: 23 September 1998 |
| |
Keywords: | PACS: 61 72 Tt 61 72 Ss 61 72 Yx |
本文献已被 SpringerLink 等数据库收录! |