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Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics |
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| Authors: | Younjin Jang Jun Shik Kim Sukin Kang Jihun Kim Yonghee Lee Kwangmin Kim Whayoung Kim Heenang Choi Nayeon Kim Taeyong Eom Taek-Mo Chung Woojin Jeon Sang Yoon Lee Cheol Seong Hwang |
| Abstract: | |
| Keywords: | charge trapping hysteresis voltage oxide thin-film transistors threshold voltage tin monoxide |