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Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing |
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| Authors: | Yuanjie Lv Xingye Zhou Shibing Long Yuangang Wang Xubo Song Xuanze Zhou Guangwei Xu Shixiong Liang Zhihong Feng Shujun Cai Xingchang Fu Aimin Pu Ming Liu |
| Abstract: | |
| Keywords: | breakdown voltages Ga2O3 metal‐oxide‐semiconductor field‐effect transistors oxygen annealing source field plates |