| Oscillatory electron phonon coupling in Pb/Si（111）deduced by temperature-dependent quantum well states |
| |
| 引用本文： | 张艳锋,贾金锋,韩铁柱,唐喆,沈全通,郭阳,薛其坤. Oscillatory electron phonon coupling in Pb/Si（111）deduced by temperature-dependent quantum well states[J]. 中国物理, 2005, 14(9): 1910-1914 |
| |
| 作者姓名： | 张艳锋 贾金锋 韩铁柱 唐喆 沈全通 郭阳 薛其坤 |
| |
| 作者单位： | Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation (Grant Nos 60021403, 60325415, 60128404) and the Special Funds for Major State Basic Research Program (Grant Nos G001CB3095, 2002CB613502, 2004CB720608) of Ministry of Science and Technology of China. |
| |
| 摘 要： | Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers （ML） have been performed within a temperature range 75-270K. Well-defined quantum well states （QWSs） are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature, whereas the peak width broadens linearly due to enhanced electron-phonon coupling strength （λ）. An oscillatory A with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects.
|
| 关 键 词： | Pb薄膜 光电效应 量子论 电子 声子 交感作用 |
| 文章编号： | 1009-1963/2005/14（09）/1910-05 |
| 收稿时间： | 2005-05-08 |
| 修稿时间： | 2005-05-082005-05-23 |
Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states |
| |
| Zhang Yan-Feng,Jia Jin-Feng,Han Tie-Zhu,Tang Zhe,Shen Quan-Tong,Guo Yang and Xue Qi-Kun. Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states[J]. Chinese Physics, 2005, 14(9): 1910-1914 |
| |
| Authors: | Zhang Yan-Feng Jia Jin-Feng Han Tie-Zhu Tang Zhe Shen Quan-Tong Guo Yang Xue Qi-Kun |
| |
| Affiliation: | Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, The Chinese Academy of Sciences,Beijing 100080, China |
| |
| Abstract: | Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers (ML) have been performed within a temperature range 75--270K.Well-defined quantum well states (QWSs) are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSsshifts towards higher binding energy with increasing substrate temperature,whereas the peak width broadens linearly due to enhanced electron--phonon coupling strength (lambda ). An oscillatory lambda with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can beexplained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects. |
| |
| Keywords: | Pb thin films photoemission quantum well states electron--phonon interactions |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
|
