新型红外非线性光学晶体BaGa2GeSe6的生长与器件制备

钡镓锗硒(BaGa₂GeSe₆,BGGSe)晶体是由中国科学家发明的一种性能优异的新型红外非线性光学材料.目前国内未见到关于该晶体的大尺寸制备报道.本研究采用自制的双温区管式炉成功合成出BGGSe多晶,单次合成量达到400 g;采用坩埚下降法生长出大尺寸高质量BGGSe单晶,尺寸为φ30 mm×90 mm,为国内首次;通过定向、切割和抛光等处理工艺,成功制备出BGGSe晶体器件,为该晶体下一步的应用研究打下了坚实基础.

Growth and Device Fabrication of New Infrared Nonlinear Optical Crystal BaGa2GeSe6

Barium gallium germanium selenium(BaGa2GeSe6,BGGSe)crystal is a novel infrared nonlinear optical material with excellent performance,which was discovered by Chinese scientists.Up to now,there is no report on large size single crystal growth of this crystal in China.In this study,polycrystalline BGGSe was synthesized successfully by using a self-made two-zone furnace with the amount of 400 g in one run.A high quality BGGSe single crystal with size ofΦ30 mm×90 mm was grown by Bridgman-stockbarger method,which is the first in China.The successful fabrication of BGGSe crystal devices was also achieved after orienting,cutting,and polishing processes,which laid a solid foundation for the further application research of the crystal.