介电层修饰并五苯/红荧烯双有源有机薄膜晶体管的制备与性能研究

在Si/SiO2衬底上使用聚甲基丙烯酸甲酯(PMMA)制备器件介电层的修饰层,改善介电层界面质量并诱导有源层生长,从而提高有源层的结晶程度.通过真空蒸镀法生长并五苯/红荧烯双层结构有源层,制备有机薄膜晶体管(OTFT),并研究器件性能随红荧烯层厚度变化的情况.测试结果表明,修饰后的器件阈值电压为-3.55 V,电流开关比大于105,迁移率达到0.0558 cm2/V·s,亚阈值摆幅为1.95 V/dec,器件总体性能得到改善.

Preparation and Properties of Pentacene/Rubrene Double Active Organic Thin Film Transistors Modified by Dielectric Layer

The modified layer of the device dielectric layer on the Si/SiO2 substrate was prepared using polymethyl methacrylate(PMMA),which improved the interface quality of the dielectric layer and induced the growth of the active layer,thereby increasing the crystallinity of the active layer.The organic thin film transistor(OTFT)was prepared by vacuum evaporation of a pentacene/rubrene double layer active layer,and the effect of device performance on the thickness of the rubrene layer was investigated.The test results show that the threshold voltage of the modified device is-3.55 V,the current-switching ratio is more than 105,the mobility reaches 0.0558 cm^2/V·s,and the subthreshold swing is 1.95 V/dec.These data suggested that the overall performance of devices with the modification of PMMA layer was successfully improved.