| Field Emission Characteristics of BN Films with Cubic－BN Phase |
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| 引用本文： | 顾广瑞,吴宝嘉,金哲,孙龙,李俊杰,赵永年,王波,严辉,王维彪.Field Emission Characteristics of BN Films with Cubic－BN Phase[J].中国物理快报,2004,21(3):565-567. |
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| 作者姓名： | 顾广瑞 吴宝嘉 金哲 孙龙 李俊杰 赵永年 王波 严辉 王维彪 |
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| 作者单位： | [1]DepartmentofPhysics,CollegeofScienceandEngineering,YanbianUniversity,Yanji133002 [2]NationalLaboratoryforSuperhardMaterials,JilinUniversity,Changchun130012 [3]KeyLaboratoryofAdvancedFunctionMaterials（MinistryofEducation）,BeijingPolytechnicUniversity,Beijing100022 [4]ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun130021 |
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| 摘 要： | Boron nitride (BN) thin films with cubic boron nitride (c-BN) phase were prepared on the (100)-oriented surface of n-Si (0.008-0.02 Ωm) by rf magnetron sputtering physical vapor deposition. The c-BN content is determined to be around 50% by using Fourier transform infrared spectroscopy for the BN thin films. The field emission characteristics of BN films were measured in an ultrahigh vacuum system. It is found that the field emission of the BN film with c-BN phase is evidently more excellent than that without c-BN phase. A turnon field of 5 V/μm and a current of 460μA/cm^2 were obtained for the BN film with c-BN phase. The Fowler-Nordheim plots of emission characteristics of BN films indicate a straight line, which suggests the presence of the FN tunneling.
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| 关 键 词： | 氮化硼薄膜 场发射 傅立叶变换 红外光谱学 c-BN相 |
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