| 温度：影响多孔硅光学特性的一个关键参数 |
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| 引用本文： | 龙永福,葛进,丁训民,侯晓远.温度：影响多孔硅光学特性的一个关键参数[J].半导体学报,2009,30(6):063002-5. |
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| 作者姓名： | 龙永福 葛进 丁训民 侯晓远 |
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| 作者单位： | Department;Physics;Electronics;Hunan;University;Arts;Science;Surface;Laboratory;（National;Laboratory）;Fudan; |
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| 摘 要： | The optical properties of porous silicon（PS） samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy（SEM）.The dependence of the optical parameters,such as the refractive index n and the optical thickness（nd） of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also decreases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased.
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| 关 键 词： | 温度范围 多孔硅 光学特性 关键参数 光致发光光谱 扫描电子显微镜 样品制备 反射光谱 |
| 修稿时间： | 4/2/2009 12:00:00 AM |
Temperature: a critical parameter affecting the optical properties of porous silicon |
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| Long Yongfu,Ge Jin,Ding Xunmin and Hou Xiaoyuan.Temperature: a critical parameter affecting the optical properties of porous silicon[J].Chinese Journal of Semiconductors,2009,30(6):063002-5. |
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| Authors: | Long Yongfu Ge Jin Ding Xunmin and Hou Xiaoyuan |
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| Institution: | Department of Physics and Electronics, Hunan University of Arts and Science, Changde 415000, China;Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China |
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| Abstract: | The optical properties of porous silicon (PS) samples fabricated by pulse etching in a temperature range from-40to 50_C have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The dependence of the optical parameters, such as the refractive index n and the optical thickness (nd) of PS samples, on the etching temperature has been analyzed in detail. As the etching temperature decreases, n decreases, indicating a higher porosity, and the physical thickness of PS samples also de-creases. Meanwhile, the reflectance spectra exhibit a more intense interference band and the interfaces are smoother. In addition, the intensity of the PL emission spectra is dramatically increased. |
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| Keywords: | porous silicon temperature optical thickness photoluminescence |
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