High performance deep red AlAs/AlGaAs top-emitting VCSELs grown by MOVPE at high growth rates

Top-emitting Alas/AlGaAs vertical cavity surface emitting lasers emitting at 765 nm with minimum threshold currents of 0.6 mA and threshold voltages of 1.9 V have been grown by MOVPE. In order to keep the growth time low, we investigated the possibility to grow these structures at growth rates of 5 μm/h. Special attention was paid to the homogeneity that can be achieved over a 2″ wafer under these growth conditions. Spatially resolved reflectivity measurements on GaAs/AlAs distributed Bragg reflectors showed, that the growth rate varies less than 0.3% in the center of the wafer and decreases by 1% at the wafer edge.