| 一个与硅氧化有关的粘性可压缩流体的自由边界问题 |
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| 引用本文： | ＳｏｌｏｎｎｉｋｏｖＶ．Ａ．,易法槐.一个与硅氧化有关的粘性可压缩流体的自由边界问题[J].数学学报,1998,41(5):1013-1018. |
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| 作者姓名： | ＳｏｌｏｎｎｉｋｏｖＶ．Ａ． 易法槐 |
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| 作者单位： | 苏州大学数学系 |
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| 摘 要： | 本文研究一个描述硅的氧化过程的自由边界问题．它的数学模型是一个可压缩的Ｎａｖｉｏｒ－Ｓｔｏｋｅｓ方程与一个抛物方程以及一个双曲方程的耦合，其中在自由边界上存在表面张力并且密度方程是非齐次的．本文将证明只要已知数据满足相容性条件，则上述问题有唯一局部强解．
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| 关 键 词： | 自由边界问题，Navior－Stokes方程，硅的氧化 |
Free Boundary Problem for a Viscous Compressible Flow Associated with Oxidation of Silicon |
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| Solonnikov V.A..Free Boundary Problem for a Viscous Compressible Flow Associated with Oxidation of Silicon[J].Acta Mathematica Sinica,1998,41(5):1013-1018. |
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| Authors: | Solonnikov VA |
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| Institution: | Solonnikov V.A. (St. Petersburg Branch of V.A. Steklov Mathematical Institute of the Russian Academy of Science Fontanka 27,191011, St. Petersburg,Russia) Yi Fahuai (Department of Mathematics, Suzhou University, Suzhou 215006, China) |
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| Abstract: | This paper is concerned with a free boundary problem describing the oxidation process of silicon. Its mathematical model is a compressible Navior-Stokes equations coupling a parabolic equation and a hyperbolic one. Surface tension is involved at the free boundary and density equation is non-homogeneous.It is proved that for arbitrary data satisfying only natural consistency conditions the problem is uniquely solvable on some finite time interval. |
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| Keywords: | Free boundary problem Navior-Stokes equations Oxidation of silicon |
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