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Growth mechanism and quantum confinement effect of silicon nanowires |
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| Authors: | Sunqi Feng Dapeng Yu Hongzhou Zhang Zhigang Bai Yu Ding Qingling Hang Yinghua Zou Jingjing Wang |
| Institution: | (1) Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, 100871 Beijing, China |
| Abstract: | The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented. Project supported by the National Natural Science Foundation of China (Grant No. 19834080) and Zhou Peiyuan Special Foundation of Mathematics and Physics. |
| Keywords: | one-dimensional nano-structure Si nawo wires VLS growth mechanism quantum confinement effect |
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