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Exciton warming in III–V semiconductors and microcavities
Authors:A Amo  D Ballarini  D Sanvitto  E Kozhemyakina  L Via  MS Skolnick  JS Roberts
Institution:aSEMICUAM Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain;bDepartment of Physics, University of Sheffield, S3 7RH, Sheffield, United Kingdom;cDepartment of Electronic and Electrical Engineering, University of Sheffield, S1 3JD, Sheffield, United Kingdom
Abstract:We present a time resolved experiment in which we dynamically tailor the occupation and temperature of a photogenerated exciton distribution in QWs by excitation with two delayed picosecond pulses. The modification of the excitonic distribution results in ultrafast changes in the PL dynamics. Our experimental results are well accounted by a quasiequilibrium thermodynamical model, which includes the occupation and momentum distribution of the excitons. We use this model and the two-pulse experimental technique to study the polariton dynamics in InGaAs-based microcavities in the strong coupling regime. In particular, we demonstrate that resonantly injected upper polaritons mainly relax to the lower polariton branch via scattering to large momentum polariton states, producing the warming of the polariton reservoir.
Keywords:Microcavity polaritons  Exciton dynamics  Time-resolved photoluminescence
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