| 液相外延制备InGaAsP/InP掩埋异质结若干工艺问题的讨论 |
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| 引用本文： | 桑文斌,钱永彪.液相外延制备InGaAsP/InP掩埋异质结若干工艺问题的讨论[J].光子学报,1996,25(10):893-897. |
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| 作者姓名： | 桑文斌 钱永彪 |
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| 作者单位： | 上海大学（嘉定校区），中国科学院上海光机所 |
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| 摘 要： | 本文对InGaAsP/InP(DC-PBH)激光器掩埋异质结液相外延生长中的几个关键工艺问题进行了研究,提出了获得有利于沟道掩埋生长的理想沟道几何图形的新的腐蚀配方(Br_2/HBr),对二次外延再生长光刻腐蚀面损伤层和有害杂质的去除采用了阳极氧化工艺,同时探索了利用二次外延过程中Zn扩散来控制限制层(3)掺杂的新方法,在研究基础上制造了重现性好且性能良好的1.3μm激光二极管,室温时,阈值电流最低小于25mA,典型值为30mA,在60mA直流电流的驱动下,光输出功率高达12.5mW.
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| 关 键 词： | LPE InGaAsP 掩埋异质结 激光二极管 |
| 收稿时间： | 1995-10-23 |
STUDY ON SOME KEY TECHNOLOGIES FOR In GaAsP/InP BURIED HETEROSTRUCTURE FORMED BY LIQUID PHASE EPITAXY |
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| Sang Wenbin,Qian Yongbiao,Min Jiahua,Mo Yaowu,Chen Peifeng, Wang Linjun,Wu Wenhai,Chen Gaoting.STUDY ON SOME KEY TECHNOLOGIES FOR In GaAsP/InP BURIED HETEROSTRUCTURE FORMED BY LIQUID PHASE EPITAXY[J].Acta Photonica Sinica,1996,25(10):893-897. |
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| Authors: | Sang Wenbin Qian Yongbiao Min Jiahua Mo Yaowu Chen Peifeng Wang Linjun Wu Wenhai Chen Gaoting |
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| Institution: | 1. Shanghai University, Jiading Campus, Shanghai, 201800 |
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| Abstract: | Some key points for LPE growth of InGaAsP/InP buried hetero structure are investigated in this paper. A new etchant-Br2/HBr system was put forward to obtain an ideal double channel geometry shape suitable to the growth of the BH structure. Anodization and etching procedures were adopted to remove effectively the damaged surface layer and poison impurities due to unequal dissolution rates of the crystal components by the photolithographic etchants. In addition,the novel processing procedure for controlling the axial p-n junction position by Zn diffsion during the 2 nd step LPE was also explored.The good performance of 1.3μm LD has been achieved with threshold current minimum of 25mA,typically 30mA and light output power up to 12.5mW driven by 60mA d-c current at room temperature. |
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| Keywords: | LPE InGaAsP Buried heterostructure Laser diode |
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