Floating-island TFT leakage caused by process step reduction |
| |
| Authors: | Tsujimura T Tokuhiro O Morooka M Miyamoto T Miwa K Yoshimura Y Andry P Libsch F |
| |
| Institution: | LCD Tech. Dev., IBM Japan, Kanagawa; |
| |
| Abstract: | The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease |
| |
| Keywords: | |
|
|
