Dielectric multilayer nanostructures of tantalum and aluminum oxides

This paper reports on the experimental results of investigations into the mechanism of formation and dielectric characteristics of multilayer nanostructures prepared through the molecular layer-by-layer growth of tantalum and aluminum oxides. It is demonstrated that the permittivity of the multilayer nanostructures varies almost linearly with a change in the content of the components. The electrical conductivity depends on the ratio between the Al₂O₃ layer thickness d_i and the Ta₂O₅ layer thickness d_j. For a layer thickness d_i (d_j)<5 nm, the tunneling phenomena contribute significantly to the permittivity and conductivity of these nanostructures.