| MNOS可变阈值晶体管的研制 |
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| 引用本文： | 赵守安,刘竞云,刘毓耿. MNOS可变阈值晶体管的研制[J]. 暨南大学学报(自然科学与医学版), 1988, 0(1) |
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| 作者姓名： | 赵守安 刘竞云 刘毓耿 |
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| 作者单位： | 暨南大学固态器件研究室，暨南大学固态器件研究室，暨南大学固态器件研究室 |
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| 摘 要： | 本文报导了用高纯氮气携带液氧蒸汽进入氧化炉生长约20A(?)的可隧穿的超薄SiO_2膜,以及用SiH_4—NH_3体系的LPCVD技术淀积具有电荷存储特性的Si_3N_4膜,从而制作出MNOS结构的可变阈值晶体管。这种晶体管的阈值电压窗口约17伏,且具有不破坏的读出特性。
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| 关 键 词： | MNOS结构 可变阈值晶体管 |
FABRICATION AND CHARACTERISTICS OF MNOS VARIABLE THRESHOLD TRANSISTOR |
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| Zhao Shouan,Liu Jingyun,Liu Yugeng. FABRICATION AND CHARACTERISTICS OF MNOS VARIABLE THRESHOLD TRANSISTOR[J]. Journal of Jinan University(Natural Science & Medicine Edition), 1988, 0(1) |
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| Authors: | Zhao Shouan Liu Jingyun Liu Yugeng |
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| Abstract: | In this paper fabrication and characteristics of MNOS variable threshold transistor were discussed. The liquid O_2 vapor is introduced to the oxidation furnace with purified N, gas, approx 25(?) tunnelable thin SiO_2 films can be grown as well as Si_3N_4 films with charge storage characteristic is deposited by SiH_4-NH_3 system LPCVD technology. Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic. |
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| Keywords: | MNOS structure Variable threshold trovnsistor |
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