Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires |
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Authors: | Wen C-Y Tersoff J Hillerich K Reuter M C Park J H Kodambaka S Stach E A Ross F M |
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Affiliation: | School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA. |
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Abstract: | Nanowire growth in the standard <111> direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure. |
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