Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy |
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Authors: | SiHua Ouyang ChunChang Wang GuoZhen Liu Meng He KuiJuan Jin ZhiMin Dang and HuiBin Lü |
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Institution: | (1) College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China;(2) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China |
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Abstract: | We report here studies on the influence of oxygen pressure on the electroresistance behavior of La0.9Sr0.1MnO3 thin films fabricated by laser molecular beam epitaxy. It was found that the film deposited at lower oxygen pressure shows
larger c-axis parameter, higher resistance, and more distinct electroresistance. These results reveal that the electroresistance of
manganite thin films can be tuned by the conditions of film fabrication.
Supported by the National Natural Science Foundation of China (Grant No. 10334070) and the National Key Basic Research Program
of China (Grant No. 2004CB619004) |
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Keywords: | La0 9Sr0 1MnO3 thin film electroresistance effect laser molecular beam epitaxy |
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