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Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy
Authors:SiHua Ouyang  ChunChang Wang  GuoZhen Liu  Meng He  KuiJuan Jin  ZhiMin Dang and HuiBin Lü
Institution:(1) College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China;(2) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
Abstract:We report here studies on the influence of oxygen pressure on the electroresistance behavior of La0.9Sr0.1MnO3 thin films fabricated by laser molecular beam epitaxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter, higher resistance, and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication. Supported by the National Natural Science Foundation of China (Grant No. 10334070) and the National Key Basic Research Program of China (Grant No. 2004CB619004)
Keywords:La0  9Sr0  1MnO3 thin film  electroresistance effect  laser molecular beam epitaxy
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