Effect of radiation annealing on activation of silicon implanted in gallium arsenide

We have investigated the profile of²⁸Si implanted in GaAs obtained by radiation annealing using an electron beam (P=7.6 W/cm², E=10 keV, t=10 sec, T≅750°C) and thermal annealing in a furnace (T=800°C, t=30 min). It was found that the radiation annealing provides diffusion redistribution of the impurities and a high degree of electrical activation. Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 89–92, July, 1998.