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Mechanisms of charge transfer and magnetoresistance in CuInSe2
Authors:A. Kh. Matiev   A. N. Georgobiani   V. V. Kodin  M. A. Matiev
Affiliation:1.Ingush State University,Magas,Russia;2.Lebedev Institute of Physics,Russian Academy of Sciences,Moscow,Russia;3.Southern State Technical University,Volgodonsk,Russia
Abstract:The electrical conductivity and magnetoresistance effect of n and p types of CuInSe2 single crystals were studied within the temperature range of 4.2–300 K and within magnetic fields of up to 6 T. It was found that the hopping mechanism of conductivity dominates in the temperature range of 4.2–100 K. A peculiarity of electrical conductivity behavior, accompanied by a change in the magnetoresistance sign in the vicinity of T ≈ 60 K, was revealed.
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