| Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well |
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| 引用本文： | 王茺,刘昭麟,陈雪梅,夏长生,张曙,杨宇,陆卫.Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well[J].中国物理快报,2007,24(11):3260-3263. |
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| 作者姓名： | 王茺 刘昭麟 陈雪梅 夏长生 张曙 杨宇 陆卫 |
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| 作者单位： | [1]Research Institute of Engineering and Technology, Yunnan University, Kunming 650091 [2]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 [3]Research Center for Detectors, Kunming Institute of Physics, Kunming 650034 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60567001, and the Cultivated Foundation for the ＇Academic Cadreman of Yunnan University＇ |
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| 摘 要： | Five InAs/InxGa1-xAs quantum dots in a well （DWELL） with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence （PL） experiments indicate that the ground state peaks of InAs/In0.15 Ga0.85As and InAs/In0.22 Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.
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| 关 键 词： | 铟 浓缩度 量子点 重离子 |
| 收稿时间： | 2007-07-16 |
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