Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating |
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Authors: | Jaeyoung Jang Sooji Nam Kyuhyun Im Jaehyun Hur Seung Nam Cha Jineun Kim Hyung Bin Son Hwansoo Suh Marsha A Loth John E Anthony Jong‐Jin Park Chan Eon Park Jong Min Kim Kinam Kim |
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Institution: | 1. Samsung Advanced Institute of Technology (SAIT), Yongin, 449‐712, Rep. Korea;2. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790‐784, Rep. Korea;3. Department of Chemistry, University of Kentucky, Lexington, Kentucky, 40506, USA |
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Abstract: | The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V?1 s?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates). |
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Keywords: | soluble acenes organic field‐effect transistors dip‐coating solvent boiling point evaporation‐induced self‐assembly solution‐crystallization |
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