An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon |
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| Authors: | Y.H. Lee J.C. Corelli J.W. Corbett |
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| Affiliation: | Department of Physics and Institute for the Study of Defects in Solids, State University of New York at Albany, Albany, New York 12222, USA |
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| Abstract: | The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 〈110〉 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment suggests the presence of an optical absorption band at λ = 1.30 μm. |
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