| 闪锌矿结构CrAs薄膜在不同过渡层InGaAs和 GaAs上的分子束外延生长、结构及磁性 |
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| 引用本文： | 毕京锋,赵建华,邓加军,郑玉宏,王玮竹,李树深.闪锌矿结构CrAs薄膜在不同过渡层InGaAs和 GaAs上的分子束外延生长、结构及磁性[J].半导体学报,2007,28(S1):204-4. |
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| 作者姓名： | 毕京锋 赵建华 邓加军 郑玉宏 王玮竹 李树深 |
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| 作者单位： | State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China; Department of Physics，University of Science and Technology of China, Hefei 230026, China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China |
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| 摘 要： | 利用低温分子束外延技术分别在lnGaAs和GaAs缓冲层上进行了CrAs薄膜的生长.截面高分辨透射电子显微镜图像表明，两种过渡层上生长的CrAs薄膜都保持闪锌矿结构。利用超导量子干涉仪测量得到的残余磁矩和温度的关系曲线证明了两种过渡层上生长的CrAs薄膜的居里温度均高于400K.闪锌矿结构CrAs薄膜在不同缓冲层上的成功生长将可能拓宽这类具有室温铁磁性新型半金属薄膜在未来半导体自旋电子学领域的应用.
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| 关 键 词： | 半金属 室温铁磁性 分子束外延 |
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