Integration of MOSFET/MIM Structures Using a CMOS-Based Technology for pH Detection Applications with High-Sensitivity |
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Institution: | 1. INAOE, Luis Enrique Erro #1, Tonantzintla, Puebla 72000, Mexico;2. Freescale Semiconductor, Periferico Sur #8110, Col. El Mante, Tlaquepaque, Jalisco 45609, Mexico |
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Abstract: | In this work, we show that by using Metal-Insulator-Metal (MIM) structures integrated in series to the gate of submicron Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices, highly-sensitive and ultra-low power consumption pH sensors can be obtained. One MIM capacitor enables external polarization of the MOSFET device while a second MIM capacitor is connected to a sensing plate whose surface is whether a thick polyimide layer or the last metallization level. The electrochemical response of these surfaces to pH buffer solutions resembles that of Ion-Sensitive Field-Effect Transistor (ISFET) devices whose pH sensitivity is dependent on the type of surface material being exposed. |
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