Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller |
| |
Authors: | Jin Xiao-Ming Fan Ru-Yu Chen Wei Lin Dong-Sheng YangShan-Chao Bai Xiao-Yan Liu Yan GuoXiao-Qiang Wang Gui-Zhen |
| |
Affiliation: | Department of Engineering Physics, Tsinghua University, Beijing 100084, China; Northwest Institute of Nuclear Technology, Xi'an 710024, China |
| |
Abstract: | This paper presents the experimental results of acombined irradiation environment of neutron and gamma rays on80C196KC20, which is a 16-bit high performance member of the MCS96microcontroller family. The electrical and functional tests weremade in three irradiation environments: neutron, gamma rays,combined irradiation of neutron and gamma rays. The experimentalresults show that the neutron irradiation can affect the totalionizing dose behaviour. Compared with the single radiationenvironment, the microcontroller exhibits considerably more severedegradation in neutron and gamma ray synergistic irradiation. Thisphenomenon may cause a significant hardness assuranceproblem. |
| |
Keywords: | total ionizing dose neutron irradiation synergisticeffect microcontroller |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|